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256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Power-Up and Reset Characteristics
Table 23: Reset AC Specifications
Symbol
Condition/Parameter
RST# LOW to read mode during program or
Legacy
t READY
JEDEC
t PLRH
Min
–
Max
32
Unit
μs
Notes
1
erase
RST# pulse width
t RP
t PLPH
100
–
ns
RST# HIGH to CE# LOW, OE# LOW
RST# LOW to standby mode during read mode
t RH
t RPD
t PHEL, t PHGL
–
50
10
–
–
ns
μs
1
RST# LOW to standby mode during program or
50
–
μs
erase
RY/BY# HIGH to CE# LOW, OE# LOW
t RB
t RHEL, t RHGL
0
–
ns
1
Note:
1. Sampled only; not 100% tested.
Figure 14: Reset AC Timing – No PROGRAM/ERASE Operation in Progress
RY/BY#
CE#, OE#
t RH
RST#
t RP
Figure 15: Reset AC Timing During PROGRAM/ERASE Operation
t READY
RY/BY#
t RB
CE#, OE#
t RH
RST#
t RP
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
54
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2012 Micron Technology, Inc. All rights reserved.
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